Post by account_disabled on Feb 28, 2024 5:53:05 GMT
Samsung's nm chips reduce power consumption by up to %.
Samsung announced that it has begun initial production of its -nanometer (nm) process node applying the Gate-All-Around (GAA) transistor architecture, surpassing rival TSMC, which hopes to begin manufacturing chips with its generation of nodes. N later this year, which reduce energy consumption .
Samsung's nm process node features for the first time what the firm calls bridge multi-channel FET (MBCFET) technology. This is Samsung's version of the GAA transistor architecture, where the gate material wraps around the conducting channel. The technology challenges the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level and at the same time improving performance by increasing the current capacity of the drive.
The company's proprietary technology uses nanosheets with wider channels, enabling higher performance and greater energy efficiency compared to GAA technologies that use nanowires with narrower channels. By using nm GAA technology, Samsung will be able to adjust the width of the nanosheet channel to optimize power usage and performance to meet various cus C Level Executive List tomer needs.
Compared with the nm process, the chip made with the first-generation nm process can reduce power consumption by up to %, improve performance by %, and reduce area by % compared with nm. The second-generation nm process will reduce power consumption by up to %, improve performance by %, and reduce area by %, according to the company.
Samsung is pioneering the first application of the nanosheet transistor with semiconductor chips for high-performance, low-power computing applications that it plans to expand to mobile processors.
The announcement of the start of production confirms Samsung's technological advantage over its rival TSMC, which still uses -nanometer FinFET transistors.
“Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as the foundry industry's first High-K metal gate, FinFET, as well as EUV. We look to continue this leadership with the world’s first nm process with MBCFET,” said Dr. Siyoung Choi, President and Head of Samsung Electronics Foundry Business. “We will continue active innovation in competitive technology development and create processes that help accelerate the achievement of technology maturity.”
Samsung announced that it has begun initial production of its -nanometer (nm) process node applying the Gate-All-Around (GAA) transistor architecture, surpassing rival TSMC, which hopes to begin manufacturing chips with its generation of nodes. N later this year, which reduce energy consumption .
Samsung's nm process node features for the first time what the firm calls bridge multi-channel FET (MBCFET) technology. This is Samsung's version of the GAA transistor architecture, where the gate material wraps around the conducting channel. The technology challenges the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level and at the same time improving performance by increasing the current capacity of the drive.
The company's proprietary technology uses nanosheets with wider channels, enabling higher performance and greater energy efficiency compared to GAA technologies that use nanowires with narrower channels. By using nm GAA technology, Samsung will be able to adjust the width of the nanosheet channel to optimize power usage and performance to meet various cus C Level Executive List tomer needs.
Compared with the nm process, the chip made with the first-generation nm process can reduce power consumption by up to %, improve performance by %, and reduce area by % compared with nm. The second-generation nm process will reduce power consumption by up to %, improve performance by %, and reduce area by %, according to the company.
Samsung is pioneering the first application of the nanosheet transistor with semiconductor chips for high-performance, low-power computing applications that it plans to expand to mobile processors.
The announcement of the start of production confirms Samsung's technological advantage over its rival TSMC, which still uses -nanometer FinFET transistors.
“Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as the foundry industry's first High-K metal gate, FinFET, as well as EUV. We look to continue this leadership with the world’s first nm process with MBCFET,” said Dr. Siyoung Choi, President and Head of Samsung Electronics Foundry Business. “We will continue active innovation in competitive technology development and create processes that help accelerate the achievement of technology maturity.”
